Major Technological Breakthrough in China's Indium Phosphide Field: Yunnan Xinyao's 6-Inch Indium Phosphide Single Crystal Wafer Mass Production Imminent

　　According to an official Weibo announcement from Jiufengshan Laboratory today, the lab recently achieved a significant technological breakthrough in the field of indium phosphide (InP) materials. It successfully developed the epitaxial growth process for 6-inch indium phosphide (InP)-based PIN structure detectors and FP structure lasers, with key performance indicators reaching internationally leading levels. This achievement also marks the first domestic realization of collaborative application from core equipment to key materials in the field of large-size indium phosphide material preparation within China.

　　As a core material in fields such as optical communication and quantum computing, the industrial application of indium phosphide (InP) materials has long faced technical bottlenecks in large-size preparation. The industry mainstream remains at the 3-inch process stage, and the high costs prevent it from meeting the explosive growth of downstream industrial applications. Jiufengshan Laboratory has overcome the challenge of large-size epitaxial uniformity control, laying the foundation for the large-scale preparation of 6-inch indium phosphide (InP) optical chips. This breakthrough, achieved in collaboration with the domestic supply chain, is of great significance for promoting the coordinated development of China's compound semiconductor industry chain. Notably, Yunnan Xinyao, the partner providing the 6-inch indium phosphide (InP) substrates for this technological breakthrough, has achieved key breakthroughs in the industrialization technology for high-quality 6-inch indium phosphide single crystal wafers, with mass production imminent. In terms of ownership structure, Yunnan Xinyao is a subsidiary of Yunnan Chihong Zinc & Germanium Co., Ltd. (002428) and primarily engages in the R&D and production of semiconductor materials.